STD45NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STD45NF75T4 ,N-CHANNEL 75VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD4N20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD4N20-1 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD4NA40 , N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STD4NB25 ,N-CHANNEL 250VSTD4NB25®N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD45NF75-STD45NF75T4
N-CHANNEL 75V
1/12April 2004
STD45NF75N-CHANNEL 75V - 0.018 Ω -40A DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.018 Ω 100% AVALANCHE TESTED GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, SWITCHING
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤40A, di/dt ≤800A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 20 A, VDD = 40V
STD45NF75
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/12
STD45NF75SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD45NF75
5/12
STD45NF75
STD45NF75
Allowable Iav vs. Time in AvalancheThe previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
