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STD40NF06LZT4STN/a1688avaiN-CHANNEL 60V
STD40NF06LZ-T4 |STD40NF06LZT4STN/a15000avaiN-CHANNEL 60V


STD40NF06LZ-T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STD40NF06LZT4-STD40NF06LZ-T4
N-CHANNEL 60V
1/8October 2002
STD40NF06LZ

N-CHANNEL 60V - 0.020 Ω - 40A DPAK
Zener-Protected STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.020Ω 100% AVALANCHE TESTED LOW GATE CHARGE LOGIC LEVEL GATE DRIVE SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4") BUILT-IN ZENER DIODES TO IMPROVE ESD
PROTECTION UP TO 2kV
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION WELDING EQUIPMENT AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area. (1)ISD ≤40A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC ID = 20A VDD = 45V
INTERNAL SCHEMATIC DIAGRAM
STD40NF06LZ
THERMAL DATA

(#) When Mounted on 1 inch2 FR-4 board, 2 oz Cu.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/8
STD40NF06LZ

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area Thermal Impedance
STD40NF06LZ
Output Characteristics Transfer Characteristics
5/8
STD40NF06LZ
.
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit

And Diode Recovery Times
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