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Partno	Mfg	Dc	Qty	Available	Descript
STD3PS25	ST	N/a	25200	avai	P-CHANNEL 250V
STD3PS25T4	ST	N/a	25200	avai	P-CHANNEL 250V

STD3PS25 ,P-CHANNEL 250VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD3PS25T4 ,P-CHANNEL 250VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD40N2LH5 , N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET
STD40NF02L ,N-CHANNEL 20VSTD40NF02L®N-CHANNEL 20V - 0.0095 Ω - 40A DPAKLOW GATE CHARGE STripFET™ POWER MOSFETPRELIMINARY D ..
STD40NF03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD40NF03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level

STD3PS25-STD3PS25T4
P-CHANNEL 250V
1/10June 2003
STD3PS25- STD3PS25-1
P-CHANNEL 250V- 2.1Ω - 3A DPAK/IPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on)= 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY GATE-SOURCE ZENER DIODE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced familyof power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makesit suitablein coverters for
lighting applications.
APPLICATIONS CONSUMER LIGHTING
ABSOLUTE MAXIMUM RATINGS
STD3PS25- STD3PS25-1
2/10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF
DYNAMIC
3/10
STD3PS25- STD3PS25-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
(4) Pulsed: Pulse duration= 300μs, duty cycle1.5%.
(5) Pulse width limitedby safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
STD3PS25- STD3PS25-1
4/10
Safe Operating Area p-ch
Output Characteristics p-ch Transfer Characteristics p-ch
Static Drain-source On Resistance p-chTransconductance p-ch
Thermal Impedance for Complementary pair
5/10
STD3PS25- STD3PS25-1
NormalizedOnResistancevsTemperaturep-chNorm.
Source-drainDiodeForwardCharacteristicsp-ch
Capacitance Variations p-chGate Chargevs Gate-source Voltage p-ch
Normalized BVDSSvs Temperature p-ch
STD3PS25- STD3PS25-1
6/10
Fig.1: Switching Times Test Circuit For
Resistive Load
Fig.2: Gate Charge test Circuit
Fig.3: Test Circuit For Diode Recovery Behaviour

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