STD3NM50T4 ,N-CHANNEL 550V @TjmaxELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD3NM60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NM60STP4NM60STD3NM60-1V Drain-source Voltage ..
STD3NM60-1 ,N-CHANNEL 600VSTP4NM60STD3NM60 - STD3NM60-1N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAKZener-Protected MDmesh™Powe ..
STD3PS25 ,P-CHANNEL 250VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD3PS25T4 ,P-CHANNEL 250VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD40N2LH5 , N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD3NM50T4
N-CHANNEL 550V @Tjmax
1/10February 2004
STD3NM50
STD3NM50-1N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK
Zener-Protected MDmesh™ MOSFET TYPICAL RDS(on)= 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar completition’s products.
APPLICATIONSThe MDmesh™ familyis very suitable for increase
the power densityof high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS()Pulse width limitedby safe operating area
(1)ISD<3A, di/dt< 400A/µs,V DD
STD3NM50/STD3NM50-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%.
3/10
STD3NM50/STD3NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
STD3NM50/STD3NM50-1
4/10
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
Safe Operating Area For DPAK/ IPAK Thermal Impedance For DPAK/ IPAK
5/10
STD3NM50/STD3NM50-1
Normalized BVdssvs TemperatureSource-drain Diode Forward Characteristics
Normalized Gate Threshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
Normalized On Resistancevs Temperature
STD3NM50/STD3NM50-1
6/10
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
