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Partno	Mfg	Dc	Qty	Available	Descript
STD3NK90ZT4 \|STD3NK90ZT4	ST	N/a	50000	avai	N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET

STD3NK90ZT4 ,N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NK90ZSTP3NK90Z STP3NK90ZFPSTD3NK90Z-1V Drain ..
STD3NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD3NM50T4 ,N-CHANNEL 550V @TjmaxELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD3NM60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NM60STP4NM60STD3NM60-1V Drain-source Voltage ..
STD3NM60-1 ,N-CHANNEL 600VSTP4NM60STD3NM60 - STD3NM60-1N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAKZener-Protected MDmesh™Powe ..
STD3PS25 ,P-CHANNEL 250VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level

STD3NK90ZT4
N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/13November 2002
STP3NK90Z- STP3NK90ZFP
STD3NK90Z- STD3NK90Z-1
N-CHANNEL 900V- 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 4.1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
2/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
4/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
Transfer CharacteristicsOutput Characteristics
Thermal Impedance For TO-220/DPAK/IPAK
5/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
Transconductance
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance
Static Drain-source On Resistance
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
6/13
Maximum Avalanche Energyvs Temperature
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
7/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load

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