STD35NF3LLT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD36NH02L , N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
STD38NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD38NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STD38NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD3N62K3 ,N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK packageFeatures R 3DS(on) 3Type V I P2DSS D D 1max1DPAKSTB3N62K3 620 V < 2.5 Ω 2.7 A 45 WIPAKSTD3N ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STY34NB50 ,N- CHANNEL 500 VSTY34NB50®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY34NB50F ,N-CHANNEL 500VSTY34NB50F®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY60NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STY60NM60 ,N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STD35NF3LLT4
N-CHANNEL 30V
1/10February 2002
STD35NF3LL
STD35NF3LL-1N-CHANNEL 30V - 0.014 Ω - 35A IPAK/DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.016 Ω @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis application specific Power MOSFET is the third
genaration of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) Starting Tj = 25 oC, ID = 17.5 A, VDD= 24 V
INTERNAL SCHEMATIC DIAGRAM
STD35NF3LL/STD35NF3LL-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/10
STD35NF3LL/STD35NF3LL-1SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD35NF3LL/STD35NF3LL-1Output Characteristics
5/10
STD35NF3LL/STD35NF3LL-1 .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STD35NF3LL/STD35NF3LL-1
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
