STD35NF06LT4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD35NF06LT4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETSTD35NF06LN-CHANNEL 60V - 0.014 Ω - 35A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD35NF0 ..
STD35NF06L-T4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD35NF06T4 ,N-CHANNEL 60V 0.018 OHM 55AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD35NF06-T4 ,N-CHANNEL 60V 0.018 OHM 55AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD35NF3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STY34NB50 ,N- CHANNEL 500 VSTY34NB50®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STD35NF06LT4-STD35NF06L-T4
N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFET
STD35NF06LN-CHANNEL 60V - 0.014 Ω - 35A DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.014 Ω LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC-AC CONVERTERS AUTOMOTIVE SWITCHING APPLICATION
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤35A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STD35NF06L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (*)
DYNAMIC
STD35NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area Thermal Impedance
STD35NF06LGate Charge vs Gate-source Voltage Capacitance Variations
STD35NF06L .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
