STD30NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06-T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30PF03L ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETSTD30PF03LSTD30PF03L-1P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAKSTripFET™ II POWER MOSFETPRELIMINARY DA ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETFeatureSize™” strip-based process. The resulting transis-tor shows extremely high packing density f ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STD30NF06T4-STD30NF06-T4
N-CHANNEL 60V
1/10March 2002
STD30NF06N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.020Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL , AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤28A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STD30NF06
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/10
STD30NF06SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD30NF06
5/10
STD30NF06Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STD30NF06
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
