STD30NF03LT4 ,N-CHANNEL 30VSTD30NF03LN-CHANNEL 30V - 0.020 Ω - 30A IPAK/DPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD30N ..
STD30NF03L-T4 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SOLENOID AND RELAY DRIVERS■ MOTOR CONTROL, AUDIO ..
STD30NF06 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06L ,N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06LT4 ,N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06L-T4 ,N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STD30NF03LT4-STD30NF03L-T4
N-CHANNEL 30V
1/9March 2000
STD30NF03LN-CHANNEL 30V - 0.020 Ω - 30A IPAK/DPAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.020Ω LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(••) Pulse width limited by safe operating area.
(•) Current limited by the package
(1)Tj = 25 oC, ID = 15A, VDD = 15V
INTERNAL SCHEMATIC DIAGRAM
STD30NF03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/9
STD30NF03LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD30NF03LOutput Characteristics Thermal Impedance Static Drain-source On Resistance Capacitance Variations
5/9
STD30NF03LNormalized Gate Threshold Voltage vs Temperature Thermal Impedance . .
STD30NF03L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
