STD2NM60T4 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD30NE06L ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06LT4 ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06L-T4 ,N-CHANNEL 60VFeatureSize™ " strip-based process. The resulting transi-stor shows extremely high packing density ..
STD30NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30NF03LT4 ,N-CHANNEL 30VSTD30NF03LN-CHANNEL 30V - 0.020 Ω - 30A IPAK/DPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD30N ..
STW9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITCH MODE POWER SUPPLIES■ DC-AC CONVERTERS FOR ..
STW9NK95Z ,N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STWD100NPWY3F ,WatchdogAbsolute maximum ratings . 15Table 4. Operating and AC measurement conditions . . . . 16Ta ..
STWD100NYWY3F ,WatchdogFeatures Current consumption 13 μA typ. Available watchdog timeout periods are 3.4 ms, 6.3 ms, 10 ..
STX13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTX13003®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ ST13003 SILICON IN TO-92 PACKAGE■ MEDIUM ..
STX13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 700 VCES BEV ..
STD2NM60T4
N-CHANNEL 600V
1/10September 2002
STD2NM60
STD2NM60-1N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
(1)ISD<2A, di/dt<400A/μs, VDD
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
STD2NM60/STD2NM60-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
3/10
STD2NM60/STD2NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
STD2NM60/STD2NM60-1
Output Characteristics
Safe Operating Area
Transfer Characteristics
Transconductance Static Drain-source On Resistance
Thermal Impedance
5/10
STD2NM60/STD2NM60-1
Normalized BVDSS vs. Temperature
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STD2NM60/STD2NM60-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
