STD2NK90ZT4 ,N-CHANNEL 900VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD2NM60 ,N-CHANNEL 600V 2.8 OHM 2A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD2NM60T4 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STD30NE06L ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06LT4 ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06L-T4 ,N-CHANNEL 60VFeatureSize™ " strip-based process. The resulting transi-stor shows extremely high packing density ..
STW9NC80Z ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW9NK70Z ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70Z2 2N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D ..
STW9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITCH MODE POWER SUPPLIES■ DC-AC CONVERTERS FOR ..
STW9NK95Z ,N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STWD100NPWY3F ,WatchdogAbsolute maximum ratings . 15Table 4. Operating and AC measurement conditions . . . . 16Ta ..
STWD100NYWY3F ,WatchdogFeatures Current consumption 13 μA typ. Available watchdog timeout periods are 3.4 ms, 6.3 ms, 10 ..
STD2NK90Z-STD2NK90Z-1-STD2NK90ZT4-STP2NK90Z
N-CHANNEL 900V
1/13October 2004
STP2NK90Z - STD2NK90Z
STD2NK90Z-1N-CHANNEL 900V - 5Ω - 2.1A TO-220/DPAK/IPAK
Zener-Protected SuperMESH™MOSFET
Rev. 2
STP2NK90Z - STD2NK90Z - STD2NK90Z-12/13
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤2.1A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/13
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STP2NK90Z - STD2NK90Z - STD2NK90Z-14/13
Figure 3: Safe Operating Area For TO-220
Figure 4: Safe Operating Area For DPAK/IPAK
Figure 5: Output Characteristics
Figure 6: Thermal Impedance TO-220
Figure 7: Thermal Impedance For DPAK/IPAK
Figure 8: Transfer Characteristics
5/13
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 12: Static Drain-Source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
STP2NK90Z - STD2NK90Z - STD2NK90Z-16/13
Figure 15: Source-Drain Forward Characteris-
tics
Temperature
Figure 17: Normalized BVDSS vs Temperature
7/13
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
