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Partno	Mfg	Dc	Qty	Available	Descript
STD2NB60T4	ST	N/a	2500	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STD2NB60-T4 \|STD2NB60T4	ST	N/a	1000	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

STD2NB60T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB60-T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB80 ,N-CHANNEL 800V
STD2NB80T4 ,N-CHANNEL 800V
STD2NC45 ,N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
STD2NK60Z ,N-CHANNEL MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220 / TO-92 TO-220FPIPAKV Drain-source Voltag ..
STW80NF55-08 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW81101 ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 950 - 1100 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipment ..
STW81101AT ,Multi-band RF frequency synthesizer with integrated VCOsfeatures . . . . 272/53 STW81101 Contents6.1.1 Data validity . . . . . . 276.1.2 START a ..
STW81101ATR ,Multi-band RF frequency synthesizer with integrated VCOsElectrical specifications . . . . 10Table 6. Phase noise specification . . 13Table 7. Cu ..
STW81102AT ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 1000 - 1162.5 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipm ..
STW81103ATR ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 1087.5 - 1250 MHz (internal divider by 4)■ Excellent integrated phase noise ■ 2.5G an ..

STD2NB60T4-STD2NB60-T4
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STD2NB60
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
March 1998
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤2.6A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD2NB60
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD2NB60
3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD2NB60
4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD2NB60
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD2NB60
6/9

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