STD2NB50T4 ,N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD2NB60T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB60-T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB80 ,N-CHANNEL 800V
STD2NB80T4 ,N-CHANNEL 800V
STD2NC45 ,N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
STW80NE06-10 ,N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW81101 ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 950 - 1100 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipment ..
STW81101AT ,Multi-band RF frequency synthesizer with integrated VCOsfeatures . . . . 272/53 STW81101 Contents6.1.1 Data validity . . . . . . 276.1.2 START a ..
STW81101ATR ,Multi-band RF frequency synthesizer with integrated VCOsElectrical specifications . . . . 10Table 6. Phase noise specification . . 13Table 7. Cu ..
STD2NB50T4
N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET
1/10September 2001
STD2NB50
STD2NB50-1N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK
PowerMesh™ MOSFET TYPICAL RDS(on) = 5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS SWITH MODE POWER SUPPLIES (SMPS) LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤1A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STD2NB50/STD2NB50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STD2NB50/STD2NB50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal Impedence Safe Operating Area
STD2NB50/STD2NB50-1
Gate Charge vs Gate-source Voltage
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
5/10
STD2NB50/STD2NB50-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD2NB50/STD2NB50-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For Resistive Load
