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Partno	Mfg	Dc	Qty	Available	Descript
STD2NB25	ST	N/a	43000	avai	N-CHANNEL 250V
STD2NB25T4	ST	N/a	25200	avai	N-CHANNEL 250V

STD2NB25 ,N-CHANNEL 250VSTD2NB25®N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB25 2 ..
STD2NB25T4 ,N-CHANNEL 250VSTD2NB25®N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB25 2 ..
STD2NB40 ,NSTD2NB40®N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAKPowerMESH™ MOSFET PRELIMINARY DATATYPE VDSS RDS(on ..
STD2NB50T4 ,N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD2NB60T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB60-T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..
STW7NC80Z ,N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NC90Z ,N-CHANNEL 900V 1.55 OHM 6A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO220FPTO-220/D PAK/TO247V Drain-source Voltage ..
STW80NE06-10 ,N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..

STD2NB25-STD2NB25T4
N-CHANNEL 250V
STD2NB25
N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK
PowerMESH MOSFET TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
October 1998
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤2A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD2NB25
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD2NB25
3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD2NB25
4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD2NB25
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD2NB25
6/9

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