STD20NF10T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STD20NF20 ,N-channel 200VapplicationsFigure 1. Internal schematic diagramDescriptionThis Power MOSFET series realized with $ ..
STD22NM20N ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD22NM20N 200 V < 0.105 Ω 22 A
STD20NF10T4
N-CHANNEL 100V
1/9October 2002
STD20NF10N-CHANNEL 100V - 0.038 Ω - 25A IPAK/DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) ISD ≤25A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 10 A, VDD = 27V
INTERNAL SCHEMATIC DIAGRAM
STD20NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
3/9
STD20NF10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD20NF10
5/9
STD20NF10Normalized Gate Threshold Voltage vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
