STD20NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD20NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STD20NF10T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STD20NF20 ,N-channel 200VapplicationsFigure 1. Internal schematic diagramDescriptionThis Power MOSFET series realized with $ ..
STD22NM20N ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD22NM20N 200 V < 0.105 Ω 22 A
STD20NF06T4
N-CHANNEL 60V
1/10June 2004
STD20NF06N-CHANNEL 60V - 0.032 Ω - 24A DPAK
STripFET™ II POWER MOSFET
Rev.3.0.6 TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH SWITCHING APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤24A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID =10 A, VDD = 45V
STD20NF06
TAB.1 THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
TAB.2 OFF
TAB.3 ON (*)
TAB.4 DYNAMIC
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STD20NF06
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD20NF06
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STD20NF06
