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STD1NA60STN/a744avaiOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN


STD1NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V < 8 Ω ..
STD1NB50 ,NSTD1NB50®N - CHANNEL 500V - 7.5Ω - 1.4A IPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD1NB50 500V ..
STD1NB60 ,NSTD1NB60®N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK PowerMESH™ MOSFETPRELIMINARY DATATYPE VDSS RDS( ..
STD1NB80 ,N-CHANNEL 800VSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STD1NB80 ,N-CHANNEL 800VSTD1NB80N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STD1NB80-1 ,NSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STW26NM60 ,N-CHANNEL 600VSTW26NM60N-CHANNEL 600V - 0.125Ω - 26A TO-247Zener-Protected MDmesh™Power MOSFETTYPE V R IDSS DS(on ..
STW26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW29NK50Z ,N-CHANNEL 500 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 500 VV Drain ..


STD1NA60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STD1NA60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 7.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
November 1996
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD1NA60

2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD1NA60

3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD1NA60

4/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD1NA60

5/10
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD1NA60

6/10
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