STD1LNC60 ,N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1LNK60Z-1 ,N-CHANNEL 600VSTD1LNK60Z-1STQ1NK60ZR - STN1NK60ZN-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223Zener-Protected SuperME ..
STD1NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V < 8 Ω ..
STD1NB50 ,NSTD1NB50®N - CHANNEL 500V - 7.5Ω - 1.4A IPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD1NB50 500V ..
STD1NB60 ,NSTD1NB60®N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK PowerMESH™ MOSFETPRELIMINARY DATATYPE VDSS RDS( ..
STD1NB80 ,N-CHANNEL 800VSTD1NB80-1N - CHANNEL 800V - 16Ω - 1A - IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) ..
STW25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 6: On /OffSymbol Parameter ..
STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STW26NM60 ,N-CHANNEL 600VSTW26NM60N-CHANNEL 600V - 0.125Ω - 26A TO-247Zener-Protected MDmesh™Power MOSFETTYPE V R IDSS DS(on ..
STW26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1LNC60
N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET
1/9February 2001
STD1LNC60N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK
PowerMESH™II MOSFET TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) BATTER CHARGER, ADAPTOR AND STAND-
BY POWER SUPPLY
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤ 1A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STD1LNC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD1LNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STD1LNC60
Gate Charge vs Gate-source Voltage Capacitance Variations
Tranconductance
Output Characteristics
5/9
STD1LNC60
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STD1LNC60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
