STD1HNC60 ,N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD1HNC60-1 ,N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STD1HNC60T4 ,N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STD1LNC60 ,N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1LNK60Z-1 ,N-CHANNEL 600VSTD1LNK60Z-1STQ1NK60ZR - STN1NK60ZN-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223Zener-Protected SuperME ..
STD1NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V < 8 Ω ..
STW25NM50N ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
STW25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 6: On /OffSymbol Parameter ..
STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STW26NM60 ,N-CHANNEL 600VSTW26NM60N-CHANNEL 600V - 0.125Ω - 26A TO-247Zener-Protected MDmesh™Power MOSFETTYPE V R IDSS DS(on ..
STW26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STD1HNC60-STD1HNC60-1
N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET
1/9February 2001
STD1HNC60N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK
PowerMesh™II MOSFET TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤ 2A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STD1HNC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
STD1HNC60
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/9
STD1HNC60
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
STD1HNC60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
