IC Phoenix
 
Home ›  SS102 > STD11NM60ND-STF11NM60ND -STP11NM60ND,N-channel 600V
STD11NM60ND-STF11NM60ND -STP11NM60ND Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STD11NM60NDSTMN/a75avaiN-channel 600V
STF11NM60ND |STF11NM60NDST N/a30000avaiN-channel 600V
STP11NM60NDSTN/a150avaiN-channel 600V


STF11NM60ND ,N-channel 600VFeatures Order codes V (@T )R max IDSS jmax DS(on) D33STD11NM60ND 10 A 1 21(1)STF11NM60ND 10 ADPAKI ..
STF11NM65N ,N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FP TO-220, DPAKI²PAKFPV Drain-source voltag ..
STF11NM80 ,N-CHANNEL 800 VFeatures Figure 1: PackageTYPE V R R *Q IDSS DS(on) DS(on) g DSTP11NM80 800 V < 0.40 Ω 14 Ω∗ nC 11 ..
STF12A80 , Bi-Directional Triode Thyristor
STF12NK60Z ,N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
STF12NM60N , N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
SUF15J ,Ultrafast Plastic Rectifier13-Feb-02 1SUF15G and SUF15JVishay Semiconductorsformerly General SemiconductorRatings and Charact ..
SUF2001 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 2.0A
SUF203B , 2.0AMP Surface Mount Super Fast Recovery Rectifiers
SUF5407 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 3.0A
SUM110N03-04P ,N-Channel 30-V (D-S) 175C MOSFET S-32523—Rev. B, 08-Dec-03 1SUM110N03-04PNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS ..
SUM110N04-02L ,N-Channel 40-V (D-S) 200C MOSFETS-04970—Rev. B, 29-Oct-01 1SUM110N04-02LNew ProductVishay Siliconix        ..


STD11NM60ND-STF11NM60ND -STP11NM60ND
N-channel 600V
October 2010 Doc ID 14625 Rev 2 1/19
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND

N-channel 600 V , 0.37 Ω , 10 A, FDmesh™ II Power MOSFET2P AK, TO-220, TO-220FP , IP AK, DP AK
Features
The worldwide best RDS(on)* area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Application

Switching applications
Description

The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters. Limited only by maximum temperature allowed
Table 1. Device summary
Contents STD/F/I/P/U11NM60ND
2/19 Doc ID 14625 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STD/F/I/P/U11NM60ND Electrical ratings
Doc ID 14625 Rev 2 3/19
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, peak VDS ≤ V(BR)DSS
Table 3. Thermal data
When mounted on 1inch² FR-4 board, 2 oz Cu
Electrical ratings STD/F/I/P/U11NM60ND
4/19 Doc ID 14625 Rev 2
Table 4. Avalanche characteristics
Pulse width limited by Tj max starting Tj= 25 °C, ID=IAS, VDD= 50 V
STD/F/I/P/U11NM60ND Electrical characteristics
Doc ID 14625 Rev 2 5/19
2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Value measured at turn off under inductive load
Table 6. Dynamic
Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Electrical characteristics STD/F/I/P/U11NM60ND
6/19 Doc ID 14625 Rev 2
Table 7. Switching times
Table 8. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
STD/F/I/P/U11NM60ND Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
I²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
Electrical characteristics STD/F/I/P/U11NM60ND
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
STD/F/I/P/U11NM60ND Electrical characteristics
Doc ID 14625 Rev 2 9/19
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
Test circuits STD/F/I/P/U11NM60ND Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED