STB9NK70ZT4 ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STBP120CVDK6F ,Overvoltage protection device with thermal shutdownApplications(air discharge), up to ±8 kV (contact discharge) in typical application circuit with 1µ ..
STBP120DVDK6F ,Overvoltage protection device with thermal shutdownAbsolute maximum ratings . 13Table 3. Thermal data . . . . 14Table 4. Operating and AC ..
STBV32 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV32®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STBV32-AP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORApplications■ Compact fluorescent lamps (CFLS)TO-92 TO-92AP■ SMPS for battery chargerDescriptionFig ..
STBV42 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV42®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STV5111 ,RGB HIGH VOLTAGE VIDEO AMPLIFIERapplications.ORDER CODE: STV5111Figure 1. PIN CONNECTIONS15 BLUE FEEDBACK14 BLUE CATHODE CURRENT13 ..
STV5342 , TELETEXT DECODER WITH 4 INTERGATED PAGES
STV5345/T , TELETEXT DECODER WITH 8 INTEGRATED PAGES
STV5347 , MONOCHIP TELETEXT AND VPS DECODER WITH 4 INTEGRATED PAGES
STB9NK70ZT4
N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/14April 2002
STP9NK70Z - STP9NK70ZFP
STB9NK70Z - STB9NK70Z-1 - STW9NK70ZN-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2 PAK/I2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤7.5A, di/dt ≤200 μA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
3/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Safe Operating Area For TO-247
Safe Operating Area For TO-220FP
Thermal Impedance For TO-247
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
5/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
7/14
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
