STB9NK60ZDT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220 / D PAK TO-220FPV Drain-source Voltage ( ..
STB9NK60ZT4 ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND P ..
STB9NK70Z-1 ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STB9NK70ZT4 ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STBP120CVDK6F ,Overvoltage protection device with thermal shutdownApplications(air discharge), up to ±8 kV (contact discharge) in typical application circuit with 1µ ..
STBP120DVDK6F ,Overvoltage protection device with thermal shutdownAbsolute maximum ratings . 13Table 3. Thermal data . . . . 14Table 4. Operating and AC ..
STV3500 ,Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen DisplayFEATURES – Progressive display mode (60 Hz, 525 lines) for full-screen graphic planes■ Versatile in ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STV5111 ,RGB HIGH VOLTAGE VIDEO AMPLIFIERapplications.ORDER CODE: STV5111Figure 1. PIN CONNECTIONS15 BLUE FEEDBACK14 BLUE CATHODE CURRENT13 ..
STV5342 , TELETEXT DECODER WITH 4 INTERGATED PAGES
STV5345/T , TELETEXT DECODER WITH 8 INTEGRATED PAGES
STB9NK60ZDT4
N-CHANNEL 600V
1/12
ADVANCED DATAJanuary 2004
STP9NK60ZD- STF9NK60ZD
STB9NK60ZDN-CHANNEL 600V- 0.85Ω - 7A TO-220/TO-220FP/D2 PAK
SuperFREDMesh™ MOSFET TYPICAL RDS(on)= 0.85Ω VERY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES FAST INTERNAL RECOVERY DIODE
DESCRIPTIONThe SuperFREDMesh™ series associatesall ad-
vantagesof reduced on-resistance, zener gate pro-
tection and very high dv/dt capability witha Fast
body-drain recovery diode. Such series comple-
ments the “FDmesh™” AdvancedT echnology.
APPLICATIONS HID BALLAST ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS
ORDERING INFORMATION
STP9NK60ZD- STF9NK60ZD- STB9NK60ZD2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤7A, di/dt ≤500A/µs,VDD≤ V(BR)DSS,Tj =25°C
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto souce.In this respect the Zener voltageis appropriateto achievean efficient and cost-
effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the usage external components.
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STP9NK60ZD- STF9NK60ZD- STB9NK60ZD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP9NK60ZD- STF9NK60ZD- STB9NK60ZD4/12
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK
Thermal Impedance For TO-220/D²PAK
Output Characteristics
5/12
STP9NK60ZD- STF9NK60ZD- STB9NK60ZD
Normalized On Resistancevs Temperature
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
Normalized Gate Threshold Voltagevs Temp.
STP9NK60ZD- STF9NK60ZD- STB9NK60ZD6/12
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
