STB9NK50ZT4 ,N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH MOSFETSTP9NK50Z - STP9NK50ZFPSTB9NK50Z - STB9NK50Z-12 2N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D PAK/I PA ..
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STV5342 , TELETEXT DECODER WITH 4 INTERGATED PAGES
STV5345/T , TELETEXT DECODER WITH 8 INTEGRATED PAGES
STB9NK50ZT4
N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH MOSFET
1/13June 2004
STP9NK50Z- STP9NK50ZFP
STB9NK50Z- STB9NK50Z-1N-CHANNEL 500V- 0.72Ω- 7.2A TO-220/FP/D2 PAK/I2 PAK
Zener-Protected SuperMESH™ MOSFET TYPICAL RDS(on)= 0.72Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤7.2A, di/dt ≤200A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto souce.In this respect the Zener voltageis appropriateto achievean efficient and cost-
effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the usage external components.
3/13
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-14/13
Transfer CharacteristicsOutput CharacteristicsSafe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
5/13
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-1
Gate Chargevs Gate-source Voltage
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Capacitance Variations
Transconductance
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-16/13
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
7/13
STP9NK50Z- STP9NK50ZFP- STB9NK50Z- STB9NK50Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
