STB9NC60-1 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB9NC60T4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STB9NK50Z ,N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP9NK50ZSTP9NK50ZFPSTB9NK50ZV Drain-source Volt ..
STB9NK50ZT4 ,N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH MOSFETSTP9NK50Z - STP9NK50ZFPSTB9NK50Z - STB9NK50Z-12 2N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D PAK/I PA ..
STB9NK60ZDT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220 / D PAK TO-220FPV Drain-source Voltage ( ..
STB9NK60ZT4 ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND P ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STV3500 ,Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen DisplayFEATURES – Progressive display mode (60 Hz, 525 lines) for full-screen graphic planes■ Versatile in ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STV5111 ,RGB HIGH VOLTAGE VIDEO AMPLIFIERapplications.ORDER CODE: STV5111Figure 1. PIN CONNECTIONS15 BLUE FEEDBACK14 BLUE CATHODE CURRENT13 ..
STB9NC60-STB9NC60-1
N-CHANNEL 600V
1/10February 2002
STB9NC60
STB9NC60-1N-CHANNEL 600V - 0.6Ω - 9A - D2 PAK/I2 PAK
PowerMesh™II MOSFET
(1)ISD ≤9A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STB9NC60 / STPBNC60-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STB9NC60 / STPBNC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STB9NC60 / STPBNC60-1
TransconductanceTransconductance
Output Characteristics Transfer Characteristics
Capacitance VariationsGate Charge vs Gate-source Voltage
5/10
STB9NC60 / STPBNC60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STB9NC60 / STPBNC60-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
