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STB85NF55T4STMN/a1535avaiN-CHANNEL 55V


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STB85NF55T4
N-CHANNEL 55V
1/10March 2004
STB85NF55
STP85NF55

N-CHANNEL 55V - 0.0062 Ω - 80A D2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT SWITCHING APPLICATION AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS

(•)Current Limited by Package
(••) Pulse width limited by safe operating area
(1)ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC ID = 40A VDD = 25V
STB85NF55/STP85NF55
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/10
STB85NF55/STP85NF55

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB85NF55/STP85NF55
5/10
STB85NF55/STP85NF55

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