STB85NF3LLT4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LL-T4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSTB85NF3LL2N-CHANNEL 30V - 0.006Ω - 85A D PAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS ..
STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB8NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB8NA50 500 V < ..
STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB8NM60T4 ,N-CHANNEL 650V@TjmaxAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 IPAKTO-220FPD²PAK DPAKV Gate-source voltag ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
STV2310 ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb Input® ST STV23 V231 10 0Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb I ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STB85NF3LLT4-STB85NF3LL-T4
N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
1/9November 2001
STB85NF3LLN-CHANNEL 30V - 0.006Ω - 85A D2 PAK
LOW GATE CHARGE STripFET™II POWER MOSFET TYPICAL RDS(on) = 0.0075Ω (@4.5V) OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONThis application specific Power MOSFET is the third
genaration of STMicroelectronics unique “ Single
Feature Size” strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STB85NF3LL
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STB85NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STB85NF3LL
Transconductance
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
5/9
STB85NF3LL
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STB85NF3LL
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
