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STB80NF55L-08 |STB80NF55L08STN/a20avaiN-CHANNEL 55V
STB80NF55L-08. |STB80NF55L08STN/a20avaiN-CHANNEL 55V


STB80NF55L-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 55 VDS GSV Drain-g ..
STB80NF55L-08. ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80PF55T4 ,P-CHANNEL 55VAPPLICATIONS■ MOTOR CONTROL■ DC-DC & DC-AC CONVERTERS
STB80PF55T4 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
STV2310 ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb Input® ST STV23 V231 10 0Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb I ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..


STB80NF55L-08-STB80NF55L-08.
N-CHANNEL 55V
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PRELIMINARY DATA

March 2004
STP80NF55L-08
STB80NF55L-08- STB80NF55L-08-1

N-CHANNEL 55V- 0.0065Ω - 80A- TO-220/D2 PAK/I2 PAK
STripFET™II POWER MOSFET
(1) Current Limitedby Package
(2)ISD ≤ 80A, di/dt ≤ 500A/µs,V DD=40VTj≤ TJMAX.
(3) Starting Tj=25°C, ID=40A, VDD=40V TYPICAL RDS(on)= 0.0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
DESCRIPTION

This Power Mosfetis the latest developmentof
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps thereforeare-
markable manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT SWITCHING APPLICATION
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
STP80NF55L-08- STB80NF55L-08- STB80NF55L-08-1
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THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STP80NF55L-08- STB80NF55L-08- STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP80NF55L-08- STB80NF55L-08- STB80NF55L-08-1
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Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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STP80NF55L-08- STB80NF55L-08- STB80NF55L-08-1
STP80NF55L-08- STB80NF55L-08- STB80NF55L-08-1
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