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STB80NF03L-04T4 |STB80NF03L04T4STN/a980avaiN-CHANNEL 30V


STB80NF03L-04T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB80NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STB80NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB80NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL
STB80NF10T4 ,N-CHANNEL 100VSTB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAKLOW GATE CHARGE STripFET™ POWER MOSFETTYPE V R IDSS DS( ..
STB80NF55-06 ,N-CHANNEL 55VSTB80NF55-06STP80NF55-06 STP80NF55-06FP2N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D PAKSTripFET ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1


STB80NF03L-04T4
N-CHANNEL 30V
1/11February 2003
STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1

N-CHANNEL 30V - 0.0035 Ω - 80A D2 PAK/I2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Ordering Information
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤80A, di/dt ≤240A/μs, VDD ≤ 24V, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 20V
STB80NF03L-04/-1/STP80NF03L-04
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/11
STB80NF03L-04/-1/STP80NF03L-04

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB80NF03L-04/-1/STP80NF03L-04
Output Characteristics Transfer Characteristics
5/11
STB80NF03L-04/-1/STP80NF03L-04
.
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit

And Diode Recovery Times
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