STB70NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
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STB70NH03LT4
N-CHANNEL 30V
1/11September 2003
STB70NH03LN-CHANNEL 30V - 0.0075 Ω - 60A D2 PAK
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION TYPICAL RDS(on) = 0.0075 Ω @ 10V TYPICAL RDS(on) = 0.009 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThe STB70NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STB70NH03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
3/11
STB70NH03LSWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (1) Value limited by wire bonding
(2) Pulse width limited by safe operating area (3) Starting Tj = 25 oC, ID = 30A, VDD = 20V
(4) Gate charge for synchronous operation . See Appendix A
ELECTRICAL CHARACTERISTICS (continued)
STB70NH03LOutput Characteristics Transfer Characteristics
5/11
STB70NH03LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
