STB70NFS03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB70NFS03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Dain-source Voltage (V = 0) 30 VDS GSV Drain-g ..
STB70NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB7101 ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value Unit oV Supply voltage 4.5 Vcc T = +25 C ..
STB7101TR ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERapplications43 4 3(0.9/1.9GHz), uses a 20 GHz F silicon bipolarTprocess. This IC is a wide range am ..
STB7102TR ,0.1/2.5 GHZ SI MMIC BUFFER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value UnitVSupply voltage 3.3 VccoTStorage tem ..
STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED
STV2248 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFeatures . . . . . . 476.3.4 Tuner Delay . . . . . . . 486.3.5 SIF
STV2248H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORSTV224XH/228XH/223XHI²C BUS-CONTROLLED MULTISTANDARDSINGLE CHIP TV PROCESSOR■ I²C Bus Control■ PIF ..
STB70NFS03L
N-CHANNEL 30V
1/9October 2001
STB70NFS03LN-CHANNEL 30V - 0.008Ω - 70A D2 PAK
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTIONThis product associates a Power MOSFET of the
third genaration of STMicroelectronics unique “ Sin-
gle Feature Size” strip-based process and a low
drop Schottky diode. The transistor shows the best
trade-off between on-resistance and gate charge.
Used as low side in buck regulators, the product is
the solution in terms of conduction losses and space
saving.
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
STB70NFS03L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STB70NFS03L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
STB70NFS03L
Capacitance Variations
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Gate Charge vs Gate-source Voltage
5/9
STB70NFS03L
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STB70NFS03L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
