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Partno	Mfg	Dc	Qty	Available	Descript
STW7NK90Z	ST	N/a	600	avai	N-CHANNEL 900V
STB6NK90ZT4	ST	N/a	3000	avai	N-CHANNEL 900V
STP6NK90ZFP		N/a	50	avai	N-CHANNEL 900V

STB6NK90ZT4 ,N-CHANNEL 900VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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STB70NF03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB70NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB70NFS03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
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STV2238D , I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR
STV2246 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORABSOLUTE MAXIMUM RATINGS . . . 264.2 THERMAL DATA 264.3 SUPPLY . . . . . . . 264 ..
STV2246H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFEATURES . . . 203.1.1 Power Supplies . . . . 203.1.2 Picture Intermediate Frequency ( ..
STV2247H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORFUNCTIONAL DESCRIPTION . . 203.1 DETAILED

STB6NK90ZT4-STP6NK90ZFP-STW7NK90Z
N-CHANNEL 900V
1/13November 2003
STP6NK90Z- STP6NK90ZFP
STB6NK90Z- STW7NK90Z
N-CHANNEL 900V- 1.56Ω - 5.8A TO-220/FP/D2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.56Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
2/13
ABSOLUTE MAXIMUM RATINGS) Pulsewidth limitedby safeoperating area
(1)ISD ≤ 5.8A, di/dt ≤ 200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
4/13
Thermal Impedance For TO-247
Thermal Impedance For TO-220FP
Thermal Impedance For TO-220/D2PAKSafe Operating Area For TO-220/D2PAK
Safe Operating Area For TO-220FP
Safe Operating Area For TO-247
5/13
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
Transfer CharacteristicsOutput Characteristics
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
6/13
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Maximum Avalanche Energyvs Temperature
Source-drain Normalized
7/13
STP6NK90Z- STP6NK90ZFP- STB6NK90Z- STW7NK90Z
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load

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