STB6NB50T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB6NB50®N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB6NB ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STV2050A ,AUTOMATIC MULTISCAN DIGITAL CONVERGENCE PROCESSORTable of Contents6.6 DATA TRANSFER BETWEEN RAM AND EEPROM . . . . 296.7 MASTER CLOCK FREQUENCY ..
STV2050ATR ,AUTOMATIC MULTISCAN DIGITAL CONVERGENCE PROCESSORapplications■ 6 Convergence channels■ 14-bit embedded DACs■ 1 Focus channel■ Second order interpola ..
STV2110B ,PAL-SECAM luma-chroma & deflection processorFUNCTIONAL DESCRIPTIONDEFLECTION The dynamic range is over than 30dB.The chrominance output signal ..
STV2112B ,BUS-CONTROLLED PAL/SECAM TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT level when V increases from 0 to 6.8V. OnCCshutting do ..
STV2116A ,BUS CONTROLLED PAL/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT - frame blanking pulse :from line 0 to 21 in 50Hz mode ..
STV2118B ,BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSORFUNCTIONAL DESCRIPTION1 - DEFLECTION CIRCUIT chroma and video circuits. The burst gate pulseis also ..
STB6NB50T4
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STB6NB50N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK
PowerMESH MOSFET TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
November 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 6A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STB6NB502/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STB6NB503/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB6NB504/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB6NB505/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STB6NB506/9
