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STB60NF06LT4STN/a16125avaiN-CHANNEL 60V


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STB60NF06LT4
N-CHANNEL 60V
1/11July 2003
STB60NF06L
STP60NF06L STP60NF06LFP

N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION 175 oC OPERATING RANGE LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION

This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area. (*) Refer to SOA for the max allowable current values on FP-type
due to Rth value
(1) ISD ≤ 60A, di/dt ≤ 600A/μs, VDD ≤ 48V, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 30A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB60NF06L STP60NF06L/FP
THERMAL DATA

(#)Only for SMD, When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (1)
DYNAMIC
3/11
STB60NF06L STP60NF06L/FP

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area for TO-220FP
STB60NF06L STP60NF06L/FP
Thermal Impedance Thermal Impedance for TO-220FP
5/11
STB60NF06L STP60NF06L/FP

Gate Charge vs Gate-source Voltage Capacitance Variations
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit

And Diode Recovery Times
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