STB55NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP_B55NF06(-1) STP55NF06FPV Drain-source Voltag ..
STB5600 ,GPS RF FRONT-END ICFUNCTIONAL DESCRIPTIONThe STB5600 GPS front-end is fed with the signal from an active antenna, via ..
STB5NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NC50STP5NC50FPSTB5NC50/-1V Drain-source Volt ..
STB5NC50-1 ,N-CHANNEL 500VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITH MODE POWER SUPPLIES (SMPS)■ DC-AC CONVERTER ..
STB5NC70Z ,N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB5NK50Z ,N-CHANNEL 500VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTB5NK50Z 500 V < 1.5 Ω 4.4 A 70 WSTB5NK50Z-1 50 ..
STV0974 ,Mobile Imaging DSPelectrical characteristics . . . . . . . 55Chapter 6 Package mechanical data . .616.1 P ..
STV0974/TR ,Mobile Imaging DSPApplications■ M-JPEG operation at up to 30 frame/s at VGA resolution■ Mobile phone embedded camera ..
STV0987B/TR ,8 Megapixel imaging processorfeatures include face tracking, video stabilization and a smooth digital zoom, bringing an outstand ..
STV1601A ,SERIAL INTERFACE TRANSMISSION ENCODERAPPLICATIONS EXAMPLES.Serial data transmission of digital televisionsignal 525-625 lines.4:2:2 comp ..
STV160NF02L ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LAT4 ,N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB55NF06T4
N-CHANNEL 60V
1/12March 2003
STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FPN-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I² PAK/D²PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.015 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2 PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”) THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTIONThis Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
(1) ISD ≤50A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Tj = 25 oC, ID = 25A, VDD= 30V(2) Starting
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/12
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Thermal Impedance for TO-220FP
5/12
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPGate Charge vs Gate-source Voltage Capacitance Variations
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
