STB55NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NF06LSTP55NF06LFPSTB55NF06L/-1V Drain-sourc ..
STB55NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP_B55NF06(-1) STP55NF06FPV Drain-source Voltag ..
STB5600 ,GPS RF FRONT-END ICFUNCTIONAL DESCRIPTIONThe STB5600 GPS front-end is fed with the signal from an active antenna, via ..
STB5NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NC50STP5NC50FPSTB5NC50/-1V Drain-source Volt ..
STB5NC50-1 ,N-CHANNEL 500VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITH MODE POWER SUPPLIES (SMPS)■ DC-AC CONVERTER ..
STB5NC70Z ,N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesFeatures– GPIOs and interrupt lines■ Demodulation2– Monitoring through I C serial interfaceTM–DIREC ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesfeatures■ Decoding■ Package– Up to 95 mega channel bits per second – LQFP-128-EP 14x14, 0.4 mm pitc ..
STV0974 ,Mobile Imaging DSPelectrical characteristics . . . . . . . 55Chapter 6 Package mechanical data . .616.1 P ..
STV0974/TR ,Mobile Imaging DSPApplications■ M-JPEG operation at up to 30 frame/s at VGA resolution■ Mobile phone embedded camera ..
STV0987B/TR ,8 Megapixel imaging processorfeatures include face tracking, video stabilization and a smooth digital zoom, bringing an outstand ..
STV1601A ,SERIAL INTERFACE TRANSMISSION ENCODERAPPLICATIONS EXAMPLES.Serial data transmission of digital televisionsignal 525-625 lines.4:2:2 comp ..
STB55NF06LT4
N-CHANNEL 60V
1/12August 2002
STP55NF06L - STP55NF06LFP
STB55NF06L - STB55NF06L-1N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2 PAK/I2 PAK
STripFET™II POWER MOSFET
(1) Starting Tj=25°C, ID=27.5A, VDD=30V
(2) ISD ≤ 55 A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal Impedance for TO-220/D2PAK/I2PAKSafe Operating Area For TO-220/D2PAK/I2PAK
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Safe Operating Area For TO-220FP
Static Drain-source On Resistance
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
5/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
