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STB55NF03LT4STN/a15000avaiN-CHANNEL 30V
STB55NF-03LT4 |STB55NF03LT4STN/a500avaiN-CHANNEL 30V


STB55NF03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB55NF-03LT4 ,N-CHANNEL 30VSTP55NF03LSTB55NF03L STB55NF03L-12 2N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D PAK/I PAKSTripFET™ II POW ..
STB55NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NF06LSTP55NF06LFPSTB55NF06L/-1V Drain-sourc ..
STB55NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP_B55NF06(-1) STP55NF06FPV Drain-source Voltag ..
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STB5NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NC50STP5NC50FPSTB5NC50/-1V Drain-source Volt ..
STV0903 ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesAPPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesSTV0903Multi-standard advanced demodulatorfor satellite digital TV and data services set-top boxesD ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesFeatures– GPIOs and interrupt lines■ Demodulation2– Monitoring through I C serial interfaceTM–DIREC ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesfeatures■ Decoding■ Package– Up to 95 mega channel bits per second – LQFP-128-EP 14x14, 0.4 mm pitc ..
STV0974 ,Mobile Imaging DSPelectrical characteristics . . . . . . . 55Chapter 6 Package mechanical data . .616.1 P ..
STV0974/TR ,Mobile Imaging DSPApplications■ M-JPEG operation at up to 30 frame/s at VGA resolution■ Mobile phone embedded camera ..


STB55NF03LT4-STB55NF-03LT4
N-CHANNEL 30V
1/11March 2002
STP55NF03L
STB55NF03L STB55NF03L-1

N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D2 PAK/I2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.01 Ω OPTIMIZED FOR HIGH SWITCHING
OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
LOW VOLTAGE DC-DC CONVERTERS HIGH CURRENT, HIGH SWITCHING SPEED HIGH EFFICIENCY SWITCHING CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
STP55NF03L STB55NF03L/-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/11
STP55NF03L STB55NF03L/-1

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STP55NF03L STB55NF03L/-1
Output Characteristics
5/11
STP55NF03L STB55NF03L/-1

Normalized Gate Threshold Voltage vs Temperature .
STP55NF03L STB55NF03L/-1
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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