STB50NE10L-T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 100 VV Drain ..
STB55NE06 ,N
STB55NE06 ,N
STB55NF03L ,N-CHANNEL 30V
STB55NF03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB55NF-03LT4 ,N-CHANNEL 30VSTP55NF03LSTB55NF03L STB55NF03L-12 2N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D PAK/I PAKSTripFET™ II POW ..
STV0681 , DUAL-MODE DIGITAL CAMERA CO-PROCESSOR
STV0903 ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesAPPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesSTV0903Multi-standard advanced demodulatorfor satellite digital TV and data services set-top boxesD ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesFeatures– GPIOs and interrupt lines■ Demodulation2– Monitoring through I C serial interfaceTM–DIREC ..
STV0903BAB ,Multi-standard advanced demodulator for satellite digital TV and data services set-top boxesfeatures■ Decoding■ Package– Up to 95 mega channel bits per second – LQFP-128-EP 14x14, 0.4 mm pitc ..
STV0974 ,Mobile Imaging DSPelectrical characteristics . . . . . . . 55Chapter 6 Package mechanical data . .616.1 P ..
STB50NE10L-T4
N-CHANNEL 100V
1/9October 2001
STB50NE10LN-CHANNEL 100V - 0.020 Ω - 50A D2 PAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED
CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤50A, di/dt ≤275A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STB50NE10L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/9
STB50NE10LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB50NE10L
5/9
STB50NE10LNormalized Gate Threshold Voltage vs Temperature . .
STB50NE10L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
