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Partno	Mfg	Dc	Qty	Available	Descript
STB3NK60ZT4	ST	N/a	4000	avai	N-CHANNEL 600V
STD3NK60ZT4	ST,ST	N/a	10000	avai	N-CHANNEL 600V

STD3NK60ZT4 ,N-CHANNEL 600VSTP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/ ..
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STD3NK80Z-1 ,N-CHANNEL 800VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STD3NK80Z-1 ,N-CHANNEL 800VSTP3NK80Z - STF3NK80ZSTD3NK80Z - STD3NK80Z-1N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAKZener-P ..
STD3NK80Z-1 ,N-CHANNEL 800Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STD3NK90Z ,N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAKZ ..
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SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25
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SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25
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SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level 

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STB3NK60ZT4-STD3NK60ZT4
N-CHANNEL 600V
1/15July 2003
STP3NK60Z- STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
N-CHANNEL 600V- 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
2/15
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤2.4A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/15
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
4/15
Output Characteristics
Safe Operating Area
Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP
Thermal Impedance
Transfer Characteristics
5/15
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
Transconductance
Normalized Gate Threshold Voltagevs Temp.
Static Drain-source On ResistanceTransconductance
Normalized On Resistancevs Temperature
Capacitance VariationsGate Chargevs Gate-source Voltage
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
6/15
Maximum
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
7/15
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load
STP3NK60Z /FP- STB3NK60Z- STD3NK60Z- STD3NK60Z-1

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