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STB30NS15
N-CHANNEL 150V
1/9October 2001
STB30NS15N-CHANNEL 150V - 0.075 Ω - 30A D2 PAK
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.075 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
•) Pulse width limited by safe operating area. (1) ISD ≤ 30A, di/dt ≤ 100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V
INTERNAL SCHEMATIC DIAGRAM
STB30NS15
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
3/9
STB30NS15SWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by Tjmax
ELECTRICAL CHARACTERISTICS (continued)
STB30NS15Output Characteristics Transfer Characteristics
5/9
STB30NS15 .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature.
STB30NS15
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
