STB30NF10T4 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETapplicationsDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET pr ..
STB30NS15 ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STB36NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STV0367B ,Low-power and ultra-compact combo DVB-T/C single-chip receiverFeatures BenefitsCombines a configurable DVB-C/DVB-T This highly integrated SoC helps to reduce boa ..
STV0370 ,STV0370 databriefSTV0370Terrestrial (ATSC), cable (ITU-T J83B) and out-of-banddigital receiversDATA BRIEFDESCRIPTION ..
STV0502 ,CCD SENSORS ANALOG PROCESSOR ICSTV0502CCD SENSORS ANALOG PROCESSOR IC.SERIAL BUS CONTROLVIDEO.CORRELATED DOUBLE SAMPLING OF THECCD ..
STV0672 , Mono and Colour Digital Video CMOS Image Sensors
STV0674 ,TRI-MODE CMOS DIGITAL CAMERA CO-PROCESSORAbsolute maximum ratings .......114.2 DC characteristics ..114.3 SDRAM interface ...134.4 NAND flas ..
STV0674T100 ,TRI-MODE CMOS DIGITAL CAMERA CO-PROCESSORfeatures of the dual mode camera, the inclusion of audio record and playback circuitry adds another ..
STB30NF10T4
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
1/11May 2002
STB30NF10
STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤30A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 30V
STB30NF10 STP30NF10 STP30NF10FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/11
STB30NF10 STP30NF10 STP30NF10FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB30NF10 STP30NF10 STP30NF10FP
5/11
STB30NF10 STP30NF10 STP30NF10FPGate Charge vs Gate-source Voltage Capacitance Variations
STB30NF10 STP30NF10 STP30NF10FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
