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STB30NE06LSTN/a510avaiN


STB30NE06L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF10T4 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETapplicationsDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET pr ..
STV0361 ,STV0360/0361 databriefSTV0360/0361COFDM demodulators IC for terrestrial TV set-top boxDATA BRIEFDESCRIPTION Figure 1. Pac ..
STV0367B ,Low-power and ultra-compact combo DVB-T/C single-chip receiverFeatures BenefitsCombines a configurable DVB-C/DVB-T This highly integrated SoC helps to reduce boa ..
STV0370 ,STV0370 databriefSTV0370Terrestrial (ATSC), cable (ITU-T J83B) and out-of-banddigital receiversDATA BRIEFDESCRIPTION ..
STV0502 ,CCD SENSORS ANALOG PROCESSOR ICSTV0502CCD SENSORS ANALOG PROCESSOR IC.SERIAL BUS CONTROLVIDEO.CORRELATED DOUBLE SAMPLING OF THECCD ..
STV0672 , Mono and Colour Digital Video CMOS Image Sensors
STV0674 ,TRI-MODE CMOS DIGITAL CAMERA CO-PROCESSORAbsolute maximum ratings .......114.2 DC characteristics ..114.3 SDRAM interface ...134.4 NAND flas ..


STB30NE06L
N
1/6November 2000
STB30NE06L

N-CHANNEL 60V - 0.35 Ω - 30A D2 PAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED
CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
DC MOTOR CONTROL DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area.
STB30NE06L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF (1)
DYNAMIC
3/6
STB30NE06L

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB30NE06L
5/6
STB30NE06L
STB30NE06L
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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