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STB25NM60NDSTN/a1000avaiN-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
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STP25NM60NDSTN/a100avaiN-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package


STB25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified).CASETable 5. On/off statesValueSymb ..
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STB25NM60ND-STF25NM60ND-STP25NM60ND
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
November 2011 Doc ID 14167 Rev 5 1/21
STx25NM60ND

N-channel 600 V , 0.13 Ω , 21 A FDmesh™ II Power MOSFET
(with fast diode) in D2P AK, TO-220FP , TO-220, TO-247
Features
The worldwide best RDS(on)*area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description

These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Limited only by maximum temperature allowed
Table 1. Device summary
Contents STx25NM60ND
2/21 Doc ID 14167 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STx25NM60ND Electrical ratings
Doc ID 14167 Rev 5 3/21
1 Electrical ratings




Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Electrical characteristics STx25NM60ND
4/21 Doc ID 14167 Rev 5
2 Electrical characteristics

(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Characteristic value at turn off on inductive load.
Table 6. Dynamic
Pulsed: pulse duration=300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STx25NM60ND Electrical characteristics
Doc ID 14167 Rev 5 5/21
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics STx25NM60ND Doc ID 14167 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220
Figure 3. Thermal impedance for D²PAK and
TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
STx25NM60ND Electrical characteristics
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Electrical characteristics STx25NM60ND Doc ID 14167 Rev 5
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
STx25NM60ND Test circuits Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
Package mechanical data STx25NM60ND
10/21 Doc ID 14167 Rev 5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: . ECOPACK
is an ST trademark.
STx25NM60ND Package mechanical data
Doc ID 14167 Rev 5 11/21
Table 8. D²PAK (TO-263) mechanical data
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