STB22NS25ZT4 ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB230NH03L , N-channel 30V - 80A - D2PAK STripFET™ Power MOSFET
STB25NM50N ,N-CHANNEL 550V @ TjMAXAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK/I ² PAK/TO-220FPTO-247VGate- source ..
STB25NM50N-1 ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
STB25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETFeatures Figure 1: Package TYPE VDSS R IDS(on) D(@Tjmax)STB25NM60N-1 650 V < 0.170 Ω 20 ASTF25NM60 ..
STB25NM60N-1 ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETAPPLICATIONSThe MDmesh™ II family is very suitable for in-crease the power density of high voltage ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC
STB22NS25ZT4
N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFET
1/10January 2002
STP22NS25Z
STB22NS25ZN-CHANNEL 250V - 0.13Ω - 22A TO-220/D2 PAK
Zener-Protected MESH OVERLAY™ MOSFET
(1) ISD ≤22A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.13 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP22NS25Z / STB22NS25Z
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STP22NS25Z / STB22NS25Z
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
STP22NS25Z / STB22NS25Z
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Thermal Impedance Safe Operating Area
5/10
STP22NS25Z / STB22NS25Z
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Gate Charge vs Gate-source Voltage
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
