STB20NM60A-1 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB20NM60A-1STF20NM60ASTP20NM60AV Gate-source Vo ..
STB20NM60D ,N-channel 600VElectrical characteristics(T =25°C unless otherwise specified)CASE Table 4. On/off statesSy ..
STB21NK50Z ,N-channel 500 VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 500 VDS GSV Gate- ..
STB21NM60N , N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh™ Power MOSFET
STB21NM60N-1 , N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK packageFeaturesTAB V RDSS @ DS(on) Order codes IDT max max3J31 21STB21NM60ND 650 V 0.22 Ω 17 A2D P ..
STV0297E ,QAM demodulator IC with A/D converterFeatures■ Decodes ITU-T J.83-Annexes A/Cand DVB-C bit streams ■ Processes Japanese transport stream ..
STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC
STB20NM60A-1
N-CHANNEL 600V
1/12March 2004
STB20NM60A-1
STP20NM60A- STF20NM60AN-CHANNEL 650V@Tj max -0.25Ω - 20A I²PAK/TO-220/TO-220FP
MDmesh™ MOSFET TYPICAL RDS(on)= 0.25Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoptionof the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance thatis significantly better than thatof similar
competition’s products.
APPLICATIONS SPECIFICALLY DESIGNED FOR ADAPTORSIN
QUASI-RESONANT CONFIGURATION
ORDER CODES
STB20NM60A-1/STP20NM60A/STF20NM60A2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤ 20A, di/dt ≤ 400 A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/12
STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration= 300µs, duty cycle1.5%.
(2) Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80% VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
STB20NM60A-1/STP20NM60A/STF20NM60A4/12
Transfer CharacteristicsOutput Characteristics
Thermal Impedance for TO-220/I2PAK
Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
5/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Normalized On Resistancevs Temperature
Capacitance VariationsGate Chargevs Gate-source Voltage
Transconductance Static Drain-Source On Resistance
STB20NM60A-1/STP20NM60A/STF20NM60A6/12
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Typical Switching Timevs Rg Typical
Typical Drain Source Voltage Slopevs Rg Typical Switching Lossesvs Rg
