STP20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)20NM60(-1) STP20NM60FPV Drain-source Volta ..
STP20NM60FD ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETSTP20NM60FD - STF20NM60DSTW20NM60FDN-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247FDmesh™ POWER ..
STP20NM60FP ,N-CHANNEL 600V 0.25 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STP21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220Absolute maximum ratingsValueSymbol Parameter UnitTO-220, I²PAK, TO-220FPD²PAK, TO-247V Gate-source ..
STP21NM50N , N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
STP21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 packageAbsolute maximum ratingsValueSymbol Parameter Unit2TO-220, D PAK TO-220FPTO-247V Drain-source volta ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STB20NM60-STB20NM60-1-STP20NM60-STP20NM60FP
N-CHANNEL 600V
1/12February 2003
STP20NM60- STP20NM60FP
STB20NM60 STB20NM60-1N-CHANNEL 600V- 0.25Ω - 20A TO-220/FP/D2 PAK/I2 PAK
MDmesh™Power MOSFET
(1)ISD ≤20A, di/dt ≤400A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*)Limited onlyby maximum temperature allowed TYPICAL RDS(on)= 0.25Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoptionof the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance thatis significantly better than thatof similar
competition’s products.
APPLICATIONSThe MDmesh™ familyis very suitable for increasing
power densityof high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
STP20NM60/ STP20NM60FP/ STB20NM60/ STB20NM60-12/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300μs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
3/12
STP20NM60/ STP20NM60FP/ STB20NM60/ STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220/D2PAK/I2PAK
STP20NM60/ STP20NM60FP/ STB20NM60/ STB20NM60-14/12
Thermal Impedance for TO-220/D2PAK/I2PAK Thermal Impedance for TO-220FP
Transfer Characteristics
Transconductance
Output Characteristics
5/12
STP20NM60/ STP20NM60FP/ STB20NM60/ STB20NM60-1
Gate Chargevs Gate-source Voltage Capacitance Variations
Normalized On Resistancevs Temperature
Source-drain Diode Forward Characteristics
STP20NM60/ STP20NM60FP/ STB20NM60/ STB20NM60-16/12
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
