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STB20NM50T4 ,N-CHANNEL 550V @ TjmaxABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)20NM50(-1) STP20NM50FPV Gate- source Volta ..
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STB20NM50FD
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET
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PRELIMINARY DATANovember 2001
STB20NM50FDN-CHANNEL 500V - 0.20Ω - 20A D2 PAK
FDmesh™Power MOSFET (With FAST DIODE) TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STB20NM50FD
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STB20NM50FD
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
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STB20NM50FD
STB20NM50FD
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*D2 PAK FOOTPRINT
