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STB20NK50ZSTN/a4800avaiN-CHANNEL 500V
STB20NK50Z-S |STB20NK50ZSSTN/a4800avaiN-CHANNEL 500V
STB20NK50ZT4STN/a4800avaiN-CHANNEL 500V
STP20NK50Z |STP20NK50ZST N/a850avaiN-CHANNEL 500V


STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB20NK50Z-S ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
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STB20NK50Z-STB20NK50Z-S-STB20NK50ZT4-STP20NK50Z
N-CHANNEL 500V
1/13May 2004
STP20NK50Z- STW20NK50Z
STB20NK50Z- STB20NK50Z-S

N-CHANNEL 500V -0.23Ω- 17A TO-220/D2 PAK/I2 SPAK/TO-247
Zener-Protected SuperMESH™ MOSFET TYPICAL RDS(on)= 0.23Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE
MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION

The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
2/13
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
(1)ISD ≤17A, di/dt ≤200A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON/OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
4/13
Safe Operating Area for TO-220/ D2PAK/ I2SPAK Thermal Impedance for TO-220/ D2PAK/I2SPAK
Transfer CharacteristicsOutput Characteristics
Thermal Impedance for TO-247Safe Operating Area for TO-247
5/13
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
Gate Chargevs Gate-source Voltage Capacitance Variations
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Static Drain-source On ResistanceTransconductance
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
6/13
Maximum
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
7/13
STP20NK50Z- STB20NK50Z- STW20NK50Z- STB20NK50Z-S
Fig.5:
Test Inductive
Fig.4:
Gate Charge test CircuitFig.
Fig.3:
Switching
Resistive Load
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