STB190NF04 ,N-CHANNEL 40VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 40 VV Drain- ..
STB190NF04T4 ,N-CHANNEL 40VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB19NB20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STB19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/D²PAK TO-220FPV Drain-source voltage 200 V ..
STB200NF03 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STV0288 ,DVB-S and DIRECTV QPSK receiver with autoscan featureapplications.converters for I-input and Q-input, a QPSKdemodulator, and a forward error correction ..
STV0297E ,QAM demodulator IC with A/D converterFeatures■ Decodes ITU-T J.83-Annexes A/Cand DVB-C bit streams ■ Processes Japanese transport stream ..
STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC
STB190NF04-STB190NF04T4
N-CHANNEL 40V
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PRELIMINARY DATAFebruary 2004
STP190NF04
STB190NF04 STB190NF04-1N-CHANNEL 40V - 3.9 mΩ - 120A D2 PAK/I2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) =3.9 mΩ STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURENT, HIGH SWITCHING SPEED AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS(•) Current limited by package (••) Pulse width limited by safe operating area.
1) ISD ≤190A, di/dt ≤600A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STB190NF04/-1 STP190NF04
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
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STB190NF04/-1 STP190NF04SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB190NF04/-1 STP190NF04
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB190NF04/-1 STP190NF04
