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STB170NF04
N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package
October 2012 Doc ID 15591 Rev 2 1/15
STB170NF04N-channel 40 V , 4.4 mΩ typ., 80 A ST ripFET™ II Power MOSFET
in a D2 PAK package
Datasheet — production data
Features Standard threshold drive
Applications Automotive switching applications
DescriptionThis N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics' unique “single feature size“
strip-based process, which decreases the critical
alignment steps to offer exceptional
manufacturing reproducibility. The result is a
transistor with extremely high packing density for
low on-resistance, rugged avalanche
characteristics and low gate charge.
Table 1. Device summary
Contents STB170NF042/15 Doc ID 15591 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB170NF04 Electrical ratings
Doc ID 15591 Rev 2 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings Current limited by package Pulse width limited by safe operating area ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Starting Tj = 25 °C, ID = 40 A, VDD = 30 V
Table 3. Thermal data When mounted on 1 inch² FR4 2 oz Cu
Electrical characteristics STB170NF04
4/15 Doc ID 15591 Rev 2
2 Electrical characteristics
(TCASE=25°C unless otherwise specified).
Table 4. On/off
Table 5. Dynamic Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6. Switching times
STB170NF04 Electrical characteristics
Doc ID 15591 Rev 2 5/15
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
Electrical characteristics STB170NF04
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
STB170NF04 Electrical characteristics
Doc ID 15591 Rev 2 7/15
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuits STB170NF04 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
