STB16NS25T4 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..
STB18NF25 ,N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STB190NF04 ,N-CHANNEL 40VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 40 VV Drain- ..
STV0288 ,DVB-S and DIRECTV QPSK receiver with autoscan featureapplications.converters for I-input and Q-input, a QPSKdemodulator, and a forward error correction ..
STV0297E ,QAM demodulator IC with A/D converterFeatures■ Decodes ITU-T J.83-Annexes A/Cand DVB-C bit streams ■ Processes Japanese transport stream ..
STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC
STB16NS25T4
N-CHANNEL 250V
1/9February 2003
STB16NS25N-CHANNEL 250V- 0.23Ω -16A D2 PAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on)= 0.23Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced familyof power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makesit suitablein coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1) ISD≤ 16A, di/dt≤300 A/μs, VDD≤ V(BR)DSS,Tj≤TjMAX
STB16NS252/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/9
STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal ImpedanceSafe Operating Area
STB16NS254/9
Transconductance
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/9
STB16NS25
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
6/9
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
